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cy7c109d cy7c1009d 1-mbit (128k x 8) static ram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05468 rev. *e revised february 22, 2007 features ? pin- and function-compatible with cy7c109b/cy7c1009b ? high speed ?t aa = 10 ns ? low active power ?i cc = 80 ma @ 10 ns ? low cmos standby power ?i sb2 = 3 ma ? 2.0v data retention ? automatic power-down when deselected ? ttl-compatible inputs and outputs ? easy memory expansion with ce 1 , ce 2 and oe options ? cy7c109d available in pb-free 32-pin 400-mil wide molded soj and 32-pin tsop i packages. cy7c1009d available in pb-free 32-pin 300-mil wide molded soj package functional description [1] the cy7c109d/cy7c1009d is a high-performance cmos static ram organized as 131,072 words by 8 bits. easy memory expansion is provided by an active low chip enable (ce 1 ), an active high chip enable (ce 2 ), an active low output enable (oe ), and tri-state drivers.the eight input and output pins (io 0 through io 7 ) are placed in a high-impedance state when: ? deselected (ce 1 high or ce 2 low), ? outputs are disabled (oe high), ? when the write operation is active (ce 1 low, ce 2 high, and we low) write to the device by taking chip enable one (ce 1 ) and write enable (we ) inputs low and chip enable two (ce 2 ) input high. data on the eight io pins (io 0 through io 7 ) is then written into the location specified on the address pins (a 0 through a 16 ). read from the device by taking chip enable one (ce 1 ) and output enable (oe ) low while forcing write enable (we ) and chip enable two (ce 2 ) high. under these conditions, the contents of the memory location specified by the address pins appears on the io pins. logic block diagram io 0 io 7 io 1 io 2 io 3 io 4 io 5 io 6 sense amps power down we oe a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 row decoder 128k x 8 array input buffer ce 1 ce 2 a 9 a 10 a 11 a 12 a 13 a 14 a 15 a 16 column decoder note 1. for guidelines on sram system design, please refer to the ?s ystem design guidelines? cypress a pplication note, available on t he internet at www.cypress.com . [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 2 of 11 pin configurations [2] selection guide cy7c109d-10 cy7c1009d-10 unit maximum access time 10 ns maximum operating current 80 ma maximum cmos standby current 3 ma 1 2 3 4 5 6 7 8 9 10 11 14 19 20 24 23 22 21 25 28 27 26 12 13 29 32 31 30 16 15 17 18 gnd a 16 a 14 a 12 a 7 a 6 a 5 a 4 a 3 we v cc a 15 a 13 a 8 a 9 io 7 io 6 io 5 io 4 a 2 nc io 0 io 1 io 2 ce 1 oe a 10 io 3 a 1 a 0 a 11 ce 2 a 6 a 7 a 16 a 14 a 12 we v cc a 4 a 13 a 8 a 9 oe tsop i top view (not to scale) 1 6 2 3 4 5 7 32 27 31 30 29 28 26 21 25 24 23 22 19 20 io 2 io 1 gnd io 7 io 4 io 5 io 6 io 0 ce a 11 a 5 17 18 8 9 10 11 12 13 14 15 16 ce 2 a 15 nc a 10 io 3 a 1 a 0 a 3 a 2 top view soj note 2. nc pins are not connected on the die. [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 3 of 11 maximum ratings exceeding the maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature ................................. ?65 c to +150 c ambient temperature with power applied.......................... ................... ?55c to +125c supply voltage on v cc to relative gnd [3] ... ?0.5v to +6.0v dc voltage applied to outputs in high-z state [3] ...................................?0.5v to v cc + 0.5v dc input voltage [3] ............................... ?0.5v to v cc + 0.5v current into outputs (low) ........................................ 20 ma static discharge voltage........................................... > 2001v (per mil-std-883, method 3015) latch-up current .................................................... > 200 ma operating range range ambient temperature v cc speed industrial ?40c to +85c 5v 0.5v 10 ns electrical characteristics (over the operating range) parameter description test conditions 7c109d-10 7c1009d-10 unit min max v oh output high voltage i oh = ?4.0 ma 2.4 v v ol output low voltage i ol = 8.0 ma 0.4 v v ih input high voltage 2.2 v cc + 0.5 v v il input low voltage [3] ?0.5 0.8 v i ix input leakage current gnd < v i < v cc ?1 +1 a i oz output leakage current gnd < v i < v cc , output disabled ?1 +1 a i cc v cc operating supply current v cc = max, i out = 0 ma, f = f max = 1/t rc 100 mhz 80 ma 83 mhz 72 ma 66 mhz 58 ma 40 mhz 37 ma i sb1 automatic ce power-down current?ttl inputs max v cc , ce 1 > v ih or ce 2 < v il , v in > v ih or v in < v il , f = f max 10 ma i sb2 automatic ce power-down current?cmos inputs max v cc , ce 1 > v cc ? 0.3v, or ce 2 < 0.3v, v in > v cc ? 0.3v, or v in < 0.3v, f = 0 3ma note 3. v il (min) = ?2.0v and v ih (max) = v cc + 1v for pulse durations of less than 5 ns. [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 4 of 11 capacitance [4] parameter description tes t conditions max unit c in input capacitance t a = 25c, f = 1 mhz, v cc = 5.0v 8 pf c out output capacitance 8 pf thermal resistance [4] parameter description test conditions 300-mil wide soj 400-mil wide soj tsop i unit ja thermal resistance (junction to ambient) still air, soldered on a 3 4.5 inch, four-layer printed circuit board 57.61 56.29 50.72 c/w jc thermal resistance (junction to case) 40.53 38.14 16.21 c/w ac test loads and waveforms [5] 90% 10% 3.0v gnd 90% 10% all input pulses * capacitive load consists of all components of the test environment rise time: 3 ns fall time: 3 ns 30 pf* output z = 50 ? 50 ? 1.5v (b) (a) 5v output 5 pf (c) r1 480 ? r2 255 ? high-z characteristics: including jig and scope notes 4. tested initially and after any design or proce ss changes that may affect these parameters. 5. ac characteristics (except high-z) are tested using the load c onditions shown in figure (a). high-z characteristics are teste d for all speeds using the test load shown in figure (c). [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 5 of 11 switching characteristics (over the operating range) [6] parameter description 7c109d-10 7c1009d-10 unit min max read cycle t power [7] v cc (typical) to the first access 100 s t rc read cycle time 10 ns t aa address to data valid 10 ns t oha data hold from address change 3 ns t ace ce 1 low to data valid, ce 2 high to data valid 10 ns t doe oe low to data valid 5 ns t lzoe oe low to low z 0 ns t hzoe oe high to high z [8, 9] 5ns t lzce ce 1 low to low z, ce 2 high to low z [9] 3ns t hzce ce 1 high to high z, ce 2 low to high z [8, 9] 5ns t pu [10] ce 1 low to power-up, ce 2 high to power-up 0 ns t pd [10] ce 1 high to power-down, ce 2 low to power-down 10 ns write cycle [11, 12] t wc write cycle time 10 ns t sce ce 1 low to write end, ce 2 high to write end 7 ns t aw address set-up to write end 7 ns t ha address hold from write end 0 ns t sa address set-up to write start 0 ns t pwe we pulse width 7 ns t sd data set-up to write end 6 ns t hd data hold from write end 0 ns t lzwe we high to low z [9] 3ns t hzwe we low to high z [8, 9] 5ns notes 6. test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3. 0v, and output loading of the specified i ol /i oh and 30-pf load capacitance. 7. t power gives the minimum amount of time that the power supply should be at typical v cc values until the first memory access can be performed 8. t hzoe , t hzce and t hzwe are specified with a load capacitance of 5 pf as in part (c) of ?ac test loads and waveforms [5] ? on page 4 . transition is measured when the outputs enter a high impedance state. 9. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any given device. 10. this parameter is guaranteed by design and is not tested. 11. the internal write time of the memory is defined by the overlap of ce 1 low, ce 2 high, and we low. ce 1 and we must be low and ce 2 high to initiate a write, and the transition of any of these signals can terminate the write. the input data set-up and hold timing should be referenced to t he leading edge of the signal that terminates the write . 12. the minimum write cycle time for write cycle no. 3 (we controlled, oe low) is the sum of t hzwe and t sd . [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 6 of 11 data retention characteristics (over the operating range) parameter description conditions min max unit v dr v cc for data retention v cc = v dr = 2.0v, ce 1 > v cc ? 0.3v or ce 2 < 0.3v, v in > v cc ? 0.3v or v in < 0.3v 2.0 v i ccdr data retention current 3ma t cdr [4] chip deselect to data retention time 0 ns t r [13] operation recovery time t rc ns data retention waveform switching waveforms read cycle no. 1 (address transition controlled) [14, 15] read cycle no. 2 (oe controlled) [15, 16] 4.5v 4.5v t cdr v dr > 2v data retention mode t r ce v cc previous data valid data valid t rc t aa t oha address data out 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu high impedance t hzoe t hzce t pd oe ce 1 address ce 2 data out v cc supply current high i cc i sb impedance notes 13. full device operation requires linear v cc ramp from v dr to v cc(min) > 50 s or stable at v cc(min) > 50 s. 14. device is continuously selected. oe , ce 1 = v il , ce 2 = v ih . 15. we is high for read cycle. 16. address valid prior to or coincident with ce 1 transition low and ce 2 transition high. [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 7 of 11 write cycle no. 1 (ce 1 or ce 2 controlled) [17, 18] write cycle no. 2 (we controlled, oe high during write) [17, 18] switching waveforms (continued) t wc data valid t aw t sa t pwe t ha t hd t sd t sce t sce ce 1 address ce 2 we data io t hd t sd t pwe t sa t ha t aw t sce t sce t wc t hzoe data in valid note 19 ce 1 address ce 2 we data io oe notes 17. data io is high impedance if oe = v ih . 18. if ce 1 goes high or ce 2 goes low simultaneously with we going high, the output remains in a high-impedance state. 19. during this period the ios are in the output state and input signals should not be applied. [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 8 of 11 write cycle no. 3 (we controlled, oe low) [12, 18] truth table ce 1 ce 2 oe we io 0 ?io 7 mode power h x x x high z power-down standby (i sb ) x l x x high z power-down standby (i sb ) l h l h data out read active (i cc ) l h x l data in write active (i cc ) l h h h high z selected, outputs disabled active (i cc ) ordering information speed (ns) ordering code package diagram package type operating range 10 CY7C109D-10VXI 51-85033 32-pin (400-mil) molded soj (pb-free) industrial cy7c109d-10zxi 51-85056 32-pin tsop type i (pb-free) cy7c1009d-10vxi 51-85041 32-pin (300-mil) molded soj (pb-free) please contact your local cypress sales representative for availability of these parts. switching waveforms (continued) data valid t hd t sd t lzwe t pwe t sa t ha t aw t sce t sce t wc t hzwe note 19 ce 1 address ce 2 we data io [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 9 of 11 package diagrams figure 1. 32-pin (300-mil) molded soj, 51-85041 figure 2. 32-pin (400-mil) molded soj, 51-85033 51-85041-*a 51-85033-*b [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 10 of 11 ? cypress semiconductor corporation, 2006-2007. the information contained herein is subject to change without notice. cypress semiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under pate nt or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical cont rol or safety applications, unless pursuant to an express writt en agreement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support system s where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemni fies cypress against all charges. figure 3. 32-pin thin small outline package type i (8x20 mm), 51-85056 all product and company names mentio ned in this document may be the tr ademarks of their respective holders. package diagrams (continued) 51-85056-*d [+] feedback [+] feedback
cy7c109d cy7c1009d document #: 38-05468 rev. *e page 11 of 11 document history page document title: cy7c109d/cy7c1009d, 1-mbit (128k x 8) static ram document number: 38-05468 rev. ecn no. issue date orig. of change description of change ** 201560 see ecn swi advance information data sheet for c9 ipp *a 233722 see ecn rkf dc parameters are modified as per eros (spec # 01-2165) pb-free offering in ordering information *b 262950 see ecn rkf added data retention characteristics table added t power spec in switching characteristics table shaded ordering information *c see ecn see ecn rkf reduced speed bins to -10 and -12 ns *d 560995 see ecn vkn converted from preliminary to final removed commercial operating range removed 12 ns speed bin added i cc values for the frequencies 83mhz, 66mhz and 40mhz updated thermal resistance table updated ordering information table changed overshoot spec from v cc +2v to v cc +1v in footnote #3 *e 802877 see ecn vkn changed i cc spec from 60 ma to 80 ma for 100mhz, 55 ma to 72 ma for 83mhz, 45 ma to 58 ma for 66mhz , 30 ma to 37 ma for 40mhz [+] feedback [+] feedback

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